The porous carbon vacuum adsorption pad is a high-performance solution tailored for precision environments, especially in semiconductor manufacturing. Made entirely from carbon materials, it offers excellent thermal resistance (up to 250°C in air and 900°C in inert gases) and superior electrical conductivity, making it ideal for managing static electricity. Its low density reduces mechanical stress on equipment, allowing for more flexible design options while ensuring dimensional stability under extreme temperatures for consistent, high-precision performance.

Optimized for uniform adsorption of silicon wafers and other films, this pad is essential for addressing issues like thermal deformation and electrostatic discharge damage in semiconductor production. With customizable sizes, materials, and surface treatments, it can be precisely tailored to meet specific operational needs. Its robust performance and versatility make it a critical component in enhancing productivity and yield in advanced manufacturing processes.